אירועים והרצאות בפקולטה למדעי המחשב ע"ש הנרי ומרילין טאוב

Two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs), have attracted significant attention for their potential in next-generation electronic and optoelectronic devices due to their atomically thin structure and unique electrical properties. Among them, monolayer MoS2 stands out as a promising semiconductor for low-power field-effect transistors (FETs).

In this work, we investigate the growth of monolayer MoS2 using chemical vapor deposition (CVD) with MoO3 and sulfur precursors. The effects of growth promoters, including NaCl and glass substrates, are systematically studied, revealing their influence on domain size, film continuity, and monolayer coverage.

A reliable transfer method is implemented to integrate the MoS2 films onto device compatible substrates. Comprehensive characterization confirms high structural and optical quality, and FETs fabricated from the transferred MoS2 exhibit promising electrical performance. These results provide valuable insights into the scalable growth–performance relationship and support the integration of CVD-grown MoS2 into future low-power electronic platforms.